12CWQ10FN

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12CWQ10FN

+Nomenclature

DIODE ARRAY SCHOTTKY 100V DPAK

  • FabricantVishay Universal Semiconductor - Division diodes

  • Pièce fabricant #12CWQ10FN

  • Package TO-252

  • En stock1572

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Spécifications

Attribut Valeur
Package Tube
ProductStatus Obsolete
DiodeConfiguration 1 Pair Common Cathode
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 100 V
Current-AverageRectified(Io)(perDiode) 6A
Voltage-Forward(Vf)(Max)@If 800 mV @ 6 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr 1 mA @ 100 V
OperatingTemperature-Junction -55°C ~ 150°C
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Présentation

Description

The 12CWQ10FN is a Schottky barrier diode designed for high-efficiency rectification in low-voltage, high-frequency applications. Key features include:
- Low forward voltage drop (VF): Enhances energy efficiency.
- Fast switching speed: Ideal for high-frequency circuits.
- High current capability: Supports up to 12A (IF(AV)).
- Compact package (TO-220FN): Space-saving and suitable for surface mounting.
Common uses include power supplies, DC-DC converters, and reverse polarity protection. Its Schottky design minimizes heat generation, improving reliability in demanding environments.
For detailed specs, refer to the manufacturer’s datasheet.

Equivalent

The 12CWQ10FN is a Schottky diode. Equivalent or similar products include:
- STPS1L30A (STMicroelectronics)
- SS1P3L (Vishay)
- BAT54S (NXP/ON Semiconductor)
- 1N5819 (Generic Schottky diode)
These alternatives offer comparable voltage/current ratings and Schottky characteristics. Verify specs for exact compatibility.

Features

The 12CWQ10FN is a Schottky diode with the following key features:
- Type: Schottky Barrier Diode
- Voltage Rating: 100V (Reverse Voltage)
- Current Rating: 12A (Average Forward Current)
- Low Forward Voltage Drop: ~0.55V (typical at 6A)
- Fast Switching: Minimal reverse recovery time, ideal for high-frequency applications
- Package: TO-220AB (through-hole, easy mounting)
- Operating Temperature: -65°C to +175°C
Commonly used in power rectification, DC-DC converters, and reverse polarity protection due to its efficiency and speed.

Manufacturer

The 12CWQ10FN is a power MOSFET manufactured by Toshiba, a well-known Japanese multinational conglomerate specializing in electronics and semiconductors. Toshiba produces a wide range of semiconductor devices, including power transistors, memory chips, and integrated circuits. The company is recognized for its innovation in power electronics and energy-efficient components.
The 12CWQ10FN is part of Toshiba's N-channel MOSFET lineup, designed for high-speed switching applications, such as power supplies and motor control. Toshiba's semiconductor division has a strong reputation for reliability and performance in industrial and consumer electronics.

Application

The 12CWQ10FN is a Schottky barrier diode commonly used in:
1. Power Supplies – For rectification in switching and DC-DC converters.
2. Reverse Polarity Protection – Safeguards circuits from voltage spikes.
3. Freewheeling Diodes – Protects inductive loads in relays and motors.
4. High-Frequency Circuits – Due to its fast switching and low forward voltage.
5. Solar Panels & Battery Chargers – Prevents backflow in energy systems.
Its low power loss and efficiency make it ideal for compact, high-performance electronics.

Package

The 12CWQ10FN is a Schottky barrier diode typically available in a SOD-123FL surface-mount package. This compact package is designed for high-efficiency applications, offering low forward voltage and fast switching. The SOD-123FL is a small, lead-free option suitable for automated PCB assembly.

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