AT24C512C-MAHM-T
Technologie de micropuce
- Lifecycle
- Active
- Stock
- 2978 PCS
- Package
- UDFN-8
- Series
- Mémoire
Cette comparaison détaillée des composants AT24C512C-MAHM-T et AT24C02C-MAPD-E vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.
Replacement verdict
The AT24C02C-MAPD-E is not a drop-in substitute for the AT24C512C-MAHM-T due to a significant density mismatch, but it remains a viable functional candidate where the 512 Kbit capacity is not required. Both devices share the same I²C interface, 1.7 V to 5.5 V supply range, and -40 °C to +85 °C operating window, so the primary engineering decision hinges on memory density and package footprint rather than electrical or protocol compatibility.
Technologie de micropuce
Technologie de micropuce
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AT24C512C-MAHM-T | AT24C02C-MAPD-E | Why it matters |
|---|---|---|---|
| Memory Density | 512 Kbit (64K x 8) | 2 Kbit (256 x 8) | Memory density determines the total storage capacity; a 512 Kbit device holds 256 times more data than a 2 Kbit device, so they are not functionally interchangeable for storage size. |
| Organization | 64K words x 8 bits | 256 words x 8 bits | The word count affects addressable locations and the number of address bytes required per operation, impacting firmware addressing logic. |
| Supply Voltage Range | 1.7 V to 5.5 V | 1.7 V to 5.5 V | Both support the same wide voltage range, allowing operation across common 1.8 V, 3.3 V, and 5 V rails. |
| Interface Type | I2C (2-wire) | I2C (2-wire) | Both use the same two-wire I2C bus, so the host communication protocol is compatible. |
| Maximum Clock Frequency | 1 MHz (at 5 V) | 1 MHz (at 5 V) | Clock speed determines data throughput; matching speeds means timing budgets remain similar. |
| Operating Temperature Range | -40 °C to +85 °C | -40 °C to +85 °C | Identical temperature ratings ensure both parts suit the same industrial and commercial environments. |
| Package / Mounting | 8-UDFN (2x3 mm), Surface Mount | 8-TSSOP, Surface Mount | Different package footprints require different PCB land patterns, so a board redesign is needed to substitute one for the other. |
| Write Cycle Time | 5 ms max | 5 ms max | Write cycle time affects how quickly sequential writes can complete; matching values keep write timing behavior consistent. |
| Endurance | 1,000,000 write cycles | 1,000,000 write cycles | Endurance defines the number of reliable write operations over the device lifetime; equal ratings indicate comparable longevity. |
| Data Retention | 100 years | 100 years | Data retention specifies how long stored data remains valid without power; identical ratings mean equivalent non-volatile reliability. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AT24C512C-MAHM-T | AT24C02C-MAPD-E |
|---|---|---|
| Series | - | Automotive, AEC-Q100 |
| Part Status | Active | Active |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | EEPROM | EEPROM |
| Technology | EEPROM | EEPROM |
| Memory Size | 512Kb (64K x 8) | 2Kb (256 x 8) |
| Memory Interface | I²C | I²C |
| Clock Frequency | 400 kHz | 1 MHz |
| Write Cycle Time - Word Page | 5ms | 5ms |
| Access Time | 900 ns | 450 ns |
| Voltage - Supply | 1.7V ~ 3.6V | 2.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
The primary difference is memory density: the AT24C512C-MAHM-T provides 512 Kbit (65,536 x 8) of EEPROM, while the AT24C02C-MAPD-E provides 2 Kbit (256 x 8). Both are I2C-compatible serial EEPROMs from Microchip, but they differ in package, operating voltage range, and page size, so they are not drop-in replacements for each other.
The AT24C512C-MAHM-T is supplied in an 8-lead UDFN (2 x 3 mm) package, while the AT24C02C-MAPD-E is supplied in an 8-lead TSSOP package. The different footprints and land patterns mean the PCB layout must be designed specifically for each package.
The AT24C512C-MAHM-T operates from 1.7 V to 5.5 V, and the AT24C02C-MAPD-E operates from 1.7 V to 5.5 V. Both support the same low-voltage supply range, making them suitable for 1.8 V, 3.3 V, and 5 V systems.
Both devices support the standard I2C Fast Mode at 400 kHz and Fast Mode Plus at 1 MHz. The AT24C512C-MAHM-T additionally supports the higher-speed 3.4 MHz mode on some supply ranges per its datasheet, while the AT24C02C-MAPD-E is specified for 1 MHz maximum operation.
The AT24C512C-MAHM-T has a 128-byte page size, whereas the AT24C02C-MAPD-E has an 8-byte page size. Both are rated for 1,000,000 write cycles and 100 years of data retention per the manufacturer datasheet, but the larger page size of the 512 Kbit device allows more efficient sequential writes.
No. The AT24C02C-MAPD-E offers only 2 Kbit versus 512 Kbit of storage, uses a different package (TSSOP vs UDFN), and has a different page size. Substitution would require firmware changes for the reduced address space and a PCB redesign for the package, so it is not a direct replacement.
The AT24C512C-MAHM-T, with its larger 512 Kbit capacity, is suited for data logging, configuration storage, and firmware parameter retention. The AT24C02C-MAPD-E, with 2 Kbit, is typically used for small calibration data, device identification, and simple non-volatile parameter storage in space-constrained designs.
Yes. Both use the standard 7-bit I2C slave address with the 1010b prefix, configurable via the A0, A1, and A2 pins. This allows multiple devices to share the same bus, though the addressable memory range differs due to the different densities.