AO3401 vs AO3401A

Cette comparaison détaillée des composants AO3401 et AO3401A vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The AO3401A is a direct functional replacement candidate for the AO3401, sharing the same P-channel MOSFET topology, SOT-23 package, and pinout. Designers should validate the tighter gate threshold and slightly reduced drain current margin against their specific circuit conditions before substituting in volume production.

Channel Polarity and Type High match
Package and Pinout High match
Drain Current Rating Validation required
Gate Threshold Voltage Validation required

Parts at a glance

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter AO3401A AO3401 Why it matters
Drain-Source Voltage (Vds) -30 V -30 V Maximum voltage the device can block; must exceed the rail voltage in the target circuit.
Continuous Drain Current (Id) -4.0 A -4.0 A Determines the load current the FET can carry continuously without overheating.
On-Resistance Rds(on) at Vgs = -10 V 50 mΩ (max) 60 mΩ (max) Lower Rds(on) reduces conduction losses and heat; a key indicator of efficiency and substitutability.
On-Resistance Rds(on) at Vgs = -4.5 V 60 mΩ (max) 75 mΩ (max) Relevant for low-voltage gate drive circuits; affects performance when driven below 10 V.
Gate Threshold Voltage (Vgs(th)) -1.3 V (max) -1.3 V (max) Defines the gate voltage at which the FET begins to conduct; critical for logic-level compatibility.
Total Gate Charge (Qg) 4.3 nC (typ) 4.3 nC (typ) Affects switching speed and gate drive power; lower Qg enables faster, more efficient switching.
Power Dissipation (Pd) 1.4 W 1.4 W Maximum power the package can dissipate; sets thermal limits for the application.
Package SOT-23 SOT-23 Footprint and thermal characteristics must match for a drop-in replacement.
Channel Type P-Channel P-Channel Channel polarity must match the circuit topology (high-side switching, reverse polarity protection, etc.).

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification AO3401 AO3401A
Part Status Not For New Designs Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On(Max) @ Id Vgs 50mOhm @ 4A, 10V 44mOhm @ 4.3A, 10V
Vgs(th)(Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 14 nC @ 10 V 12.2 nC @ 4.5 V
Vgs(Max) ±12V ±12V
Input Capacitance(Ciss)(Max) @ Vds 645 pF @ 15 V 1200 pF @ 15 V
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What is the difference between AO3401A and AO3401?

Both are P-channel enhancement-mode MOSFETs in SOT-23 packages from Alpha & Omega Semiconductor. The AO3401A is a revised version of the AO3401. The primary difference is in the gate threshold voltage (VGS(th)) specification and the guaranteed RDS(on) at VGS = -2.5 V. The AO3401A specifies a maximum VGS(th) of -1.3 V, while the AO3401 specifies a maximum VGS(th) of -1.4 V. Designers should consult the respective datasheets for the exact limits relevant to their operating conditions.

Are AO3401A and AO3401 pin-compatible?

Yes. Both devices use the standard SOT-23 (TO-236) package with the same pinout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain. The package dimensions and PCB land pattern are identical, so they are drop-in compatible from a mechanical and pinout perspective.

What are the key ratings of the AO3401A and AO3401?

Both devices are rated for a drain-source voltage (VDS) of -30 V, a continuous drain current (ID) of -4 A at TC = 25 °C, and a maximum power dissipation (PD) of 1.4 W at TA = 25 °C. Both feature low on-resistance, with RDS(on) specified at VGS = -10 V and VGS = -4.5 V. Refer to the manufacturer datasheets for the exact RDS(on) values and test conditions.

Can AO3401A be used as a direct replacement for AO3401?

In most designs, yes, because the two parts share the same package, pinout, VDS rating, and current rating. However, the AO3401A has a tighter gate threshold voltage specification, which can affect circuits that rely on a specific VGS(th) window. Verify the VGS(th) and RDS(on) limits in the target design before substituting.

What is the gate threshold voltage of AO3401A versus AO3401?

The AO3401A specifies a gate threshold voltage range of -0.5 V to -1.3 V (VDS = VGS, ID = -250 µA). The AO3401 specifies a range of -0.5 V to -1.4 V under the same test conditions. The AO3401A therefore offers a slightly tighter upper limit on VGS(th).

Are both AO3401A and AO3401 RoHS compliant?

Yes. Both the AO3401A and AO3401 are offered in RoHS-compliant, halogen-free packages per Alpha & Omega Semiconductor's environmental documentation. Confirm the specific ordering suffix and packaging option on the manufacturer datasheet for the exact compliance statement applicable to the purchased part number.

What applications are AO3401A and AO3401 suitable for?

Both P-channel MOSFETs are intended for load switching, battery protection, power management, and level-shifting in portable and consumer electronics. Their -30 V VDS rating and low RDS(on) make them suitable for low-voltage, high-side switching applications where a small SOT-23 footprint is required.