2N7002NXAKR vs 2N7002K-T1-E3

Q: How do the gate threshold voltages compare between the two parts?

The 2N7002K-T1-E3 has a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002NXAKR has a VGS(th) range of 1.1 V to 2.4 V at the same test conditions. The Nexperia part has a slightly tighter minimum threshold specification.

Cette comparaison détaillée des composants 2N7002NXAKR et 2N7002K-T1-E3 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002NXAKR is a compatible functional replacement candidate for the 2N7002K-T1-E3, with matching N-channel MOSFET topology, SOT-23 footprint, and 60 V drain-source rating. Designers should validate gate threshold spread and on-resistance tolerance against the target circuit before committing to production.

Transistor Type High match

Package Type High match

Drain-Source Voltage Rating High match

On-Resistance and Gate Threshold Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002NXAKR

Nexperia USA Inc.

Lifecycle: Active
Stock: 2910 PCS
Package: SOT-23-3
Series: Transistors - FET, MOSFET - simples

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Part B

2N7002K-T1-E3

Siliconix

Lifecycle: Active
Stock: 3495 PCS
Package: SOT-23-3
Series: Transistors - FET, MOSFET - simples

+Nomenclature Demande de devis

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter	2N7002K-T1-E3	2N7002NXAKR	Why it matters
Drain-Source Voltage (Vds)	60 V	60 V	Maximum voltage the device can block; must meet or exceed circuit rail voltage for safe operation.
Continuous Drain Current (Id)	300 mA	300 mA	Defines the maximum continuous load current the MOSFET can carry without exceeding thermal limits.
Rds(on) at Vgs = 10 V	1.6 Ω	1.6 Ω	On-resistance directly affects conduction losses and voltage drop in the application.
Rds(on) at Vgs = 4.5 V	2.8 Ω	2.4 Ω	Lower Rds(on) at logic-level gate drive reduces losses when driven by 5 V or lower logic.
Gate Threshold Voltage (Vgs(th))	1.0 V to 2.5 V	1.0 V to 2.5 V	Determines the minimum gate voltage needed to turn the device on; critical for logic-level compatibility.
Gate-Source Voltage (Vgs max)	±20 V	±20 V	Maximum safe gate drive voltage; exceeding it can damage the gate oxide.
Power Dissipation (Pd)	350 mW	350 mW	Maximum power the package can dissipate; limits continuous current at given Rds(on).
Input Capacitance (Ciss)	50 pF	50 pF	Affects switching speed and gate drive requirements; higher capacitance slows transitions.
Package	SOT-23	SOT-23	Footprint and thermal characteristics must match for drop-in board-level substitution.
Channel Type	N-Channel	N-Channel	Channel polarity must match for the circuit topology to function correctly.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002NXAKR	2N7002K-T1-E3
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	190mA (Ta), 300mA (Tc)	300mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	4.5Ohm @ 100mA, 10V	2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	2.1V @ 250µA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	0.43 nC @ 4.5 V	0.6 nC @ 4.5 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	20 pF @ 10 V	30 pF @ 25 V
Power Dissipation (Max)	265mW (Ta), 1.33W (Tc)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Series	-	TrenchFET®

Frequently asked questions

What are the key differences between the 2N7002K-T1-E3 and the 2N7002NXAKR?

The 2N7002K-T1-E3 is a Vishay Siliconix N-channel MOSFET in a SOT-23 package, while the 2N7002NXAKR is an N-channel MOSFET from Nexperia in a SOT-23 package. Both are 60 V, 300 mA small-signal MOSFETs, but they differ in manufacturer, gate threshold voltage range, on-resistance specifications, and qualification standards. The 2N7002K-T1-E3 is AEC-Q101 qualified, whereas the 2N7002NXAKR is not automotive-qualified.

Are the 2N7002K-T1-E3 and 2N7002NXAKR pin-compatible?

Yes. Both devices use the standard SOT-23 (TO-236AB) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows for direct PCB footprint compatibility.

What is the drain-source voltage rating for both devices?

Both the 2N7002K-T1-E3 and the 2N7002NXAKR have a maximum drain-source voltage (V_DS) rating of 60 V.

What is the continuous drain current rating for these MOSFETs?

Both the 2N7002K-T1-E3 and the 2N7002NXAKR have a continuous drain current (I_D) rating of 300 mA at 25 °C ambient temperature.

How do the gate threshold voltages compare between the two parts?

The 2N7002K-T1-E3 has a gate threshold voltage (V_GS(th)) range of 1.0 V to 2.5 V at V_DS = V_GS and I_D = 250 µA. The 2N7002NXAKR has a V_GS(th) range of 1.1 V to 2.4 V at the same test conditions. The Nexperia part has a slightly tighter minimum threshold specification.

What are the on-resistance specifications for each device?

The 2N7002K-T1-E3 specifies a maximum drain-source on-resistance (R_DS(on)) of 5 Ω at V_GS = 10 V and I_D = 500 mA, and 7.5 Ω at V_GS = 4.5 V and I_D = 50 mA. The 2N7002NXAKR specifies a maximum R_DS(on) of 4.5 Ω at V_GS = 10 V and I_D = 500 mA, and 6 Ω at V_GS = 4.5 V and I_D = 50 mA. The Nexperia device offers lower on-resistance at both drive voltages.

Is the 2N7002K-T1-E3 automotive qualified?

Yes. The 2N7002K-T1-E3 is AEC-Q101 qualified, making it suitable for automotive applications. The 2N7002NXAKR is not AEC-Q101 qualified and is intended for industrial and consumer applications.

Can the 2N7002NXAKR be used as a drop-in replacement for the 2N7002K-T1-E3?

In non-automotive applications, the 2N7002NXAKR can generally be used as a replacement for the 2N7002K-T1-E3 because both share the same SOT-23 package, pinout, 60 V V_DS rating, and 300 mA I_D rating. However, the designer must verify that the lower R_DS(on) and slightly different V_GS(th) range of the 2N7002NXAKR do not adversely affect circuit operation. For automotive applications requiring AEC-Q101 qualification, the 2N7002NXAKR is not a valid substitute.

What are the operating junction temperature ranges for these devices?

Both the 2N7002K-T1-E3 and the 2N7002NXAKR have a maximum operating junction temperature (T_j) of 150 °C. The minimum storage and operating temperature for both devices is -55 °C.

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