2N7002A-7 vs 2N7002K-7

Cette comparaison détaillée des composants 2N7002A-7 et 2N7002K-7 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002A-7 are both 60 V, 300 mA N-channel enhancement-mode MOSFETs in the SOT-23 package, sharing identical pinout, threshold voltage range, and small-signal switching characteristics. The 2N7002K-7 offers a lower maximum on-resistance and higher pulsed drain current capability, making it the more robust choice for demanding switching and level-shifting applications, while the 2N7002A-7 remains a cost-effective alternative for general-purpose low-current designs. Both devices are functionally interchangeable in most circuits, though designers should verify thermal and pulsed-current margins when substituting the 2N7002A-7 into high-stress applications originally specified with the 2N7002K-7.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002K-7
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 2.5V @ 1mA
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.3 nC @ 4.5 V
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