2N7002 vs 2N7002E-T1-E3

Cette comparaison détaillée des composants 2N7002 et 2N7002E-T1-E3 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 is a functionally compatible replacement candidate for the 2N7002, sharing the same N-channel enhancement-mode MOSFET architecture, SOT-23 package, and 60 V drain-source rating. Designers should validate gate threshold voltage tolerance and on-resistance at the intended operating point before committing to production, as these parameters may shift switching behavior in sensitive circuits.

Drain-Source Voltage Rating High match
Package Type High match
On-Resistance Validation required
Gate Threshold Voltage Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002 2N7002E-T1-E3
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 200mA (Tc) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2 nC @ 5 V 0.6 nC @ 4.5 V
Vgs(Max) ±18V ±20V
Input Capacitance(Ciss)(Max) @ Vds 43 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 350mW (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series STripFET™ -
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